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| 型號： | MAT03FH |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise, Matched Dual PNP Transistor |
| 中文描述： | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | METAL CAN-6 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 254K |
| 代理商： | MAT03FH |
MAT03
–3–
REV. B
MAT 03N
Limits
Parameter
Symbol
Conditions
Units
Breakdown Voltage
Offset Voltage
BV
CEO
V
OS
36
200
200
80
60
6
200
200
75
75
0.75
0.1
V min
μ
V max
μ
V max
min
min
% max
μ
V max
μ
V max
μ
V max
μ
V max
max
V max
I
C
= 100
μ
A, V
CB
= 0 V
10
μ
A
≤
I
C
≤
1 mA
I
C
= 1 mA, V
CB
= 0 V, –36 V
I
C
= 10
μ
A, V
CB
= 0 V, –36 V
I
C
= 100
μ
A, V
CB
= 0 V
V
CB1
= 0 V, I
C
= 100
μ
A
V
CB2
= –36 V
V
CB
= 0
I
C1
= 10
μ
A, I
C2
= 1 mA
10
μ
A
≤
I
C
≤
1 mA
I
C
= 1 mA, I
B
= 100
μ
A
Current Gain
h
FE
Current Gain Match
Offset Voltage Change vs. V
CB
h
FE
V
OS
/
V
CB
Offset Voltage Change
vs. Collector Current
Bulk Resistance
Collector Saturation Voltage
V
OS
/
I
C
r
BE
V
CE (SAT )
NOT E:
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
WAFER TEST LIMTS
(at 25
8
C, unless otherwse noted.)
DICE CHARACT E RIST ICS
SUBSTRATE CAN BE
CONNECTED TO V– OR
FLOATED
1. COLLECTOR (1 )
2. BASE (1 )
3. EMITTER (1 )
4. COLLECTOR (2)
5. BASE (2)
6. EMITTER (2 )
ABSOLUT E MAX IMUM RAT INGS
1
Collector-Base Voltage (BV
CBO
) . . . . . . . . . . . . . . . . . . . .36 V
Collector-Emitter Voltage (BV
CEO
) . . . . . . . . . . . . . . . . . .36 V
Collector-Collector Voltage (BV
CC
) . . . . . . . . . . . . . . . . . .36 V
Emitter-Emitter Voltage (BV
EE
) . . . . . . . . . . . . . . . . . . . . .36 V
Collector Current (I
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (I
E
) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
T otal Power Dissipation
Ambient T emperature
≤
70
°
C
2
. . . . . . . . . . . . . . . .500 mW
Operating T emperature Range
MAT 03A . . . . . . . . . . . . . . . . . . . . . . . . . .–55
°
C to +125
°
C
MAT 03E/F . . . . . . . . . . . . . . . . . . . . . . . . .–40
°
C to +85
°
C
Operating Junction T emperature . . . . . . . . . .–55
°
C to +150
°
C
Storage T emperature . . . . . . . . . . . . . . . . . . .–65
°
C to +150
°
C
Lead T emperature (Soldering, 60 sec) . . . . . . . . . . . . . +300
°
C
Junction T emperature . . . . . . . . . . . . . . . . . .–65
°
C to +150
°
C
NOT ES
1
Absolute maximum ratings apply to both DICE and packaged devices.
2
Rating applies to T O-78 not using a heat sink, and LCC; devices in free air only. For
T O-78, derate linearly at 6.3 mW/
°
C above 70
°
C ambient temperature; for LCC,
derate at 7.8 mW/
°
C.
ORDE RING GUIDE
1
V
OS
max
(T
A
= +25
8
C)
T emperature
Range
Package
Option
Model
MAT 03AH
2
MAT 03EH
MAT 03FH
100
μ
V
100
μ
V
200
μ
V
–55
°
C to +125
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
T O-78
T O-78
T O-78
NOT ES
1
Burn-in is available on industrial temperature range parts.
2
For devices processed in total compliance to MIL-ST D-883, add/883 after part
number. Consult factory for 883 data sheet.
WARNING!
ESD SENSITIVE DEVICE
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT 03 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAT03FH | 制造商:Analog Devices 功能描述:SEMICONDUCTORSLINEAR |
| MAT03FHZ | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT03GBC | 制造商:Analog Devices 功能描述: |
| MAT04 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Matched Monolithic Quad Transistor |
| MAT-04 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Matched Monolithic Quad Transistor |
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