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參數(shù)資料
| 型號： | MAT03FH |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise, Matched Dual PNP Transistor |
| 中文描述： | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | METAL CAN-6 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 254K |
| 代理商： | MAT03FH |
MAT 03A
Min
T yp
MAT 03E
MAT 03F
Min
Parameter
Symbol
Conditions
Max Min
T yp
Max
T y
p
Max
Units
Current Gain
1
h
FE
V
CB
= 0 V, –36 V
I
C
= 1 mA
I
C
= 100
μ
A
I
= 10
μ
A
I
C
= 100
μ
A,V
= 0 V
V
CB
= 0 V, I
C
= 100
μ
A
100
90
80
165
150
120
0.5
40
100
90
80
165
150
120
0.5
40
80
70
60
165
150
120
0.5
40
Current Gain Matching
2
Offset Voltage
3
Offset Voltage Change
vs. Collector Voltage
Dh
FE
V
OS
DV
OS
/DV
CB
I
= 100
μ
A
3
100
3
100
6
200
%
μ
V
V
CB1
= 0 V
V
CB2
= –36 V
V
CB
= 0 V
I
C1
= 10
μ
A, I
C2
= 1 mA
V
CB
= 0 V
10
μ
A
≤
I
C
≤
1 mA
I
C
= 100
μ
A, V
CB
= 0 V
11
11
12
12
0.3
0.3
6
150
150
50
50
0.75
0.75
35
11
11
12
12
0.3
0.3
6
150
150
50
50
0.75
0.75
35
11
11
12
12
0.3
0.3
6
200
200
75
75
0.75
0.75
45
μ
V
μ
V
μ
V
μ
V
nA
Offset Voltage Change
vs. Collector Current
Bulk Resistance
DV
OS
/DI
C
r
BE
Offset Current
Collector-Base
Leakage Current
Noise Voltage Density
4
I
OS
I
CB0
e
N
V
CB
= –36 V = V
I
C
= 1 mA, V
CB
= 0
f
O
= 10 Hz
f
O
= 100 Hz
f
O
= 1 kHz
f
O
= 10 kHz
50
200
50
200
50
400
pA
0.8
0.7
0.7
0.7
2
1
1
1
0.8
0.7
0.7
0.7
0.8
0.7
0.7
0.7
nV/
÷
Hz
nV/
÷
Hz
nV/
÷
Hz
nV/
÷
Hz
Collector Saturation
Voltage
V
CE(SAT )
I
C
= 1 mA, I
B
= 100
μ
A
0.025 0.1
0.025 0.1
0.025 0.1
V
–2–
REV. B
NOT ES
1
Current gain is measured at collector-base voltages (V
CB
) swept from 0 to V
MAX
at indicated collector current. T ypicals are measured at V
CB
= 0 V.
100 (
I
B
)
h
FE
(min)
I
C
3
Offset voltage is defined as: V
OS
= V
BE1
– V
BE2
, where V
OS
is the differential voltage for I
C1
= I
C2
: V
OS
= V
BE1
– V
BE2
=
4
Sample tested. Noise tested and specified as equivalent input voltage for each transistor.
5
Guaranteed by V
OS
test
(TCV
OS
=
V
OS
/T
for
V
OS
!
V
BE
)
where T
= 2
98
°
K
for T
A
= 25
°
C.
Specifications subject to change without notice.
2
Current gain matching (
h
FE
) is defined as:
h
FE =
.
KT
q
In
I
C
1
I
C
2
.
MAT03–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ T
A
= +25
8
C, unless otherwse noted.)
ELECTRICAL CHARACTERISTICS
MAT 03A
T yp
Parameter
Symbol
Conditions
Min
Max
Units
Current Gain
h
FE
V
CB
= 0 V, –36 V
I
C
= 1 mA
I
C
= 100
μ
A
I
= 10
μ
A
I
C
= 100
μ
A, V
CB
= 0 V
I
C
= 100
μ
A, V
CB
= 0 V
I
C
= 100
μ
A, V
CB
= 0 V
70
60
50
110
100
85
40
0.3
15
54
Offset Voltage
Offset Voltage Drift
5
Offset Current
Breakdown Voltage
V
T CV
OS
I
BV
CEO
150
0.5
85
μ
V
μ
V/
°
C
nA
V
36
(at –55
8
C
≤
T
A
≤
+125
8
C, unless otherwse noted.)
ELECTRICAL CHARACTERISTICS
MAT 03E
T yp
MAT 03F
T yp
Parameter
Symbol
Conditions
Min
Max
Min
Max
Units
Current Gain
h
FE
V
CB
= 0 V, –36 V
I
C
= 1 mA
I
C
= 100
μ
A
I
C
= 10
μ
A
I
C
= 100
μ
A, V
CB
= 0 V
I
C
= 100
μ
A, V
CB
= 0 V
I
C
= 100
μ
A, V
CB
= 0 V
70
60
50
120
105
90
30
0.3
10
60
50
40
120
105
90
30
0.3
10
Offset Voltage
Offset Voltage Drift
5
Offset Current
Breakdown Voltage
V
OS
T CV
OS
I
OS
BV
CEO
135
0.5
85
265
1.0
200
μ
V
μ
V/
°
C
nA
V
36
36
(at –40
8
C
≤
T
A
≤
+85
8
C, unless otherwse noted.)
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相關(guān)代理商/技術(shù)參數(shù) |
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| MAT03FH | 制造商:Analog Devices 功能描述:SEMICONDUCTORSLINEAR |
| MAT03FHZ | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT03GBC | 制造商:Analog Devices 功能描述: |
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