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參數(shù)資料
| 型號： | MAT02AH/883C |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | TO-78, 6 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 264K |
| 代理商： | MAT02AH/883C |
MAT02
–4–
REV. C
MAT02N
Parameter
Symbol
Conditions
Limits
Units
Average Offset
TCVOS
10
A ≤ I
C
≤ 1 mA
0.08
V/°C
Voltage Drift
0
≤ V
CB ≤ VMAX
Average Offset
TCIOS
IC = 10
A
40
pA/
°C
Current Drift
Gain-Bandwidth
fT
VCE = 10 V, IC = 10 mA
200
MHz
Product
Offset Current Change vs. VCB
I
OS/
V
CB
0
≤ V
CB
≤ 40 V
70
pA/V
MAT02N
Parameter
Symbol
Conditions
Limits
Units
Breakdown Voltage
BVCEO
40
V min
Offset Voltage
VOS
10
A ≤ I
C ≤ 1 mA
1
150
V max
Input Offset Current
IOS
1.2
nA max
Input Bias Current
IB
VCB = 0 V
34
nA max
Current Gain
hFE
IC = 1 mA, VCB = 0 V
400
min
IC = 10
A, V
CB = 0 V
300
Current Gain Match
h
FE
10
A ≤ I
C
≤ 1 mA, V
CB = 0 V
4
% max
Offset Voltage
V
OS/VCB
0 V
≤ V
CB ≤ 40 V
50
V max
Change vs. VCB
10
A ≤ I
C
≤ 1 mA1
Offset Voltage Change
V
OS/
I
C
VCB = 0
50
V max
vs. Collector Current
10
A ≤ I
C ≤ 1 mA
1
Bulk Resistance
rBE
100
A ≤ I
C
≤ 10 mA
0.5
max
Collector Saturation Voltage
VCE (SAT)
IC = 1 mA
0.2
V max
IB = 100 A
NOTES
1Measured at l
C = 10 A and guaranteed by design over the specified range of I C.
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT02 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WAFER TEST LIMITS (@ 25 C for V
CB = 15 V and IC = 10
A, unless otherwise noted.)
(VCB = 15 V, IC = 10 A, TA = +25 C, unless otherwise noted.)
TYPICAL ELECTRICAL CHARACTERISTICS
Die Size 0.061
× 0.057 inch, 3,477 sq. mils
(1.549
× 1.448 mm, 224 sq. mm)
1. COLLECTOR (1)
2. BASE (1)
3. EMITTER (1)
4. COLLECTOR (2)
5. BASE (2)
6. EMITTER (2)
7. SUBSTRATE
DICE CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAT02AH/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-02AH/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-02AH | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT02BRC/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT02AH/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAT02BH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BIEH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BRC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02EH | 制造商:Analog Devices 功能描述:AMPLIFIER IC NUMBER OF CIRCUITS:2 |
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