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參數(shù)資料
| 型號： | MAT02AH/883C |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | TO-78, 6 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 264K |
| 代理商： | MAT02AH/883C |
MAT02A
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Offset Voltage
VOS
VCB = 0
80
V
1
A ≤ I
C ≤ 1 mA
1
Average Offset
Voltage Drift
TCVOS
10
A ≤ I
C
≤ 1 mA, 0 ≤ V
CB
≤ V
MAX
2
0.08
0.3
V/°C
VOS Trimmed to Zero
3
0.03
0.1
V/°C
Input Offset Current
IOS
IC = 10
A9
nA
Input Offset
Current Drift
TCIOS
IC = 10 A
4
40
90
pA/
°C
Input Bias Current
IB
IC = 10
A60
nA
Current Gain
hFE
IC = 1 mA
5
275
IC = 100 A
225
IC = 10
A
125
IC = 1
A
150
Collector-Base
ICBO
VCB = VMAX
Leakage Current
TA = 125
°C15
nA
Collector-Emitter
ICES
VCE = VMAX, VBE = 0
Leakage Current
TA = 125°C50
nA
Collector-Collector
ICC
VCC = VMAX
Leakage Current
TA = 125
°C30
nA
ELECTRICAL CHARACTERISTICS
MAT02E
MAT02F
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Units
Offset Voltage
VOS
VCB = 0
70
220
V
1
A ≤ I
C ≤ 1 mA
1
Average Offset
Voltage Drift
TCVOS
10
A ≤ I
C
≤ 1 mA, 0 ≤ V
CB
≤ V
MAX
2
0.08 0.3
0.08 1
V/°C
VOS Trimmed to Zero
3
0.03 0.1
0.03 0.3
Input Offset Current
IOS
IC = 10
A8
13
nA
Input Offset
Current Drift
TCIOS
IC = 10 A
4
40
90
40
150
pA/
°C
Input Bias Current
IB
IC = 10
A45
50
nA
Current Gain
hFE
IC = 1 mA
5
325
300
IC = 100 A
275
250
IC = 10
A
225
200
IC = 1
A
200
150
Collector-Base
ICBO
VCB = VMAX
23
nA
Leakage Current
Collector-Emitter
ICES
VCE = VMAX, VBE = 0
3
4
nA
Leakage Current
Collector-Collector
ICC
VCC = VMAX
34
nA
Leakage Current
(VCB = 15 V, –25 C ≤ TA ≤ +85 C, unless otherwise noted.)
ELECTRICAL CHARACTERISTICS (V
CB = 15 V, –55 C
≤ T
A
≤ +125 C, unless otherwise noted.)
MAT02
–3–
REV. C
NOTES
1Measured at I
C = 10 A and guaranteed by design over the specified range of I C.
2Guaranteed by V
OS test (TCVOS
V
OS
T
for VOS
VBE) T = 298
°K for T
A = 25
°C.
3The initial zero offset voltage is established by adjusting the ratio of IC1 to IC2 at T
A = 25°C. This ratio must be held to 0.003% over
the entire temperature range. Measurements are taken at the temperature extremes and 25
°C.
4Guaranteed by design.
5Current gain is guaranteed with Collector-Base Voltage (V
CB) swept from 0 to VMAX at the indicated collector current.
Specifications subject to change without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAT02AH/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-02AH/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-02AH | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT02BRC/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT02AH/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAT02BH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BIEH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BRC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02EH | 制造商:Analog Devices 功能描述:AMPLIFIER IC NUMBER OF CIRCUITS:2 |
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