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參數(shù)資料
| 型號(hào)： | MAT01N |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Matched Monolithic Dual Transistor |
| 中文描述： | 匹配單片雙晶體管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | MAT01N |
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
Matched Monolithic
Dual Transistor
MAT01
FEATURES
Low V
OS
(V
BE
Match): 40
m
V typ, 100
m
V max
Low TCV
OS
: 0.5
m
V/
8
C max
High h
FE
: 500 min
Excellent h
FE
Linearity from 10 nA to 10 mA
Low Noise Voltage: 0.23
m
V p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
Available in Die Form
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40
μ
V, tem-
perature drift of 0.15
μ
V/
°
C, and h
FE
matching of 0.7%. Very
high h
FE
is provided over a six decade range of collector current,
including an exceptional h
FE
of 590 at a collector current of only
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
PIN CONNECTION
TO-78
(H Suffix)
NOTE: Substrate is connected to case.
BURN-IN CIRCUIT
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
World Wide Web Site: http://www.analog.com
Fax: 617/326-8703
Analog Devices, Inc., 1997
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| MAT02AH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02AH/883C | 制造商:Rochester Electronics LLC 功能描述:LOW-NOISE DUAL- LEV.B - Bulk |
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