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參數(shù)資料
| 型號： | MAT-01GH |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 873K |
| 代理商： | MAT-01GH |
MAT01
–4–
REV. B
ABSOLUTE MAXIMUM RATINGS
1
Collector-Base Voltage (BVCBO)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Emitter Voltage (BVCEO)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Collector Voltage (BVCC)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Emitter Voltage (BVEE)
MAT01AH, GH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Base Voltage (BVEBO)
2
. . . . . . . . . . . . . . . . . . . . . 5 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . .25 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
Total Power Dissipation
Case Temperature
≤ 40°C3 . . . . . . . . . . . . . . . . . . . . 1.8 W
Ambient Temperature
≤ 70°C4 . . . . . . . . . . . . . . . 500 mW
Operating Ambient Temperature . . . . . . . . . –55
°C to +125°C
Operating Junction Temperature . . . . . . . . . –55
°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300
°C
DICE Junction Temperature . . . . . . . . . . . . –65
°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to measure
BVEBO greater than the 5 V rating shown.
3Rating applies to applications using heat sinking to control case temperature.
Derate linearity at 16.4 mW/
°C for case temperatures above 40°C.
4Rating applies to applications not using heat sinking; device in free air only. Derate
linearity at 6.3 mW/
°C for ambient temperatures above 70°C.
ORDERING GUIDE
1
VOS max
Temperature
Package
Model
(TA = 25 C)
Range
Option
MAT01AH
2
0.1 mV
–55
°C to +125°C TO-78
MAT01GH
0.5 mV
–55
°C to +125°C TO-78
NOTES
1Burn-in is available on commercial and industrial temperature range parts in
TO-can packages.
2For devices processed in total compliance to MIL-STD-883, add/883 after part
number. Consult factory for 883 data sheet.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT01 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MAT01GH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT01GHZ | 功能描述:TRANS MATCHED MONO DUAL TO-78-6 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT01N | 制造商:AD 制造商全稱:Analog Devices 功能描述:Matched Monolithic Dual Transistor |
| MAT02 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Low Noise, Matched Dual Monolithic Transistor |
| MAT020903H | 制造商:Analog Devices 功能描述:MATCHED MONOLITHE TRANSISTOR - Rail/Tube |
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