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| 型號(hào)： | MAT-01GH |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 25 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 873K |
| 代理商： | MAT-01GH |
REV. B
–2–
MAT01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ V
CB = 15 V, IC = 10
A, TA = 25 C, unless otherwise noted.)
MAT01AH
MAT01GH
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Min
Unit
Breakdown Voltage
BVCEO
IC = 100
A45
45
V
Offset Voltage
VOS
0.04
0.1
0.10
0.5
mV
Offset Voltage Stability
First Month
VOS/Time
(Note 1)
2.0
V/Mo
Long Term
(Note 2)
0.2
V/Mo
Offset Current
IOS
0.1
0.6
0.2
3.2
nA
Bias Current
IB
13
20
18
40
nA
Current Gain
hFE
IC = 10 nA
590
430
IC = 10
A
500
770
250
560
IC = 10 mA
840
610
Current Gain Match
hFE
IC = 10
A
0.7
3.0
1.0
8.0
%
100 nA
≤ I
C
≤ 10 mA
0.8
1.2
%
Low Frequency Noise
Voltage
en p-p
0.1 Hz to 10 Hz
3
0.23
0.4
0.23
0.4
V p-p
Broadband Noise
Voltage
en rms
1 Hz to 10 kHz
0.60
V rms
Noise Voltage
Density
en
fO = 10 Hz
3
7.0
9.0
7.0
9.0
nV/
√Hz
fO = 100 Hz
3
6.1
7.6
6.1
7.6
nV/
√Hz
fO = 1000 Hz
3
6.0
7.5
6.0
7.5
nV/
√Hz
Offset Voltage Change
V
OS/
V
CB
0
≤ V
CB
≤ 30 V
0.5
3.0
0.8
8.0
V/V
Offset Current Change
IOS/VCB
0
≤ VCB ≤ 30 V
2
15
3
70
pA/V
Collector-Base
Leakage Current
ICBO
VCB = 30 V, IE = 0
4
15
50
25
200
pA
Collector-Emitter
Leakage Current
ICES
VCE = 30 V, VBE = 0
4, 5
50
200
90
400
pA
Collector-Collector
Leakage Current
ICC
VCC = 30 V
5
20
200
30
400
pA
Collector Saturation
VCE(SAT)
IB = 0.1 mA, IC = 1 mA
0.12
0.20
0.12
0.25
V
Voltage
IB = 1 mA, IC = 10 mA
0.8
V
Gain-Bandwidth Product
fT
VCE = 10 V, IC = 10 mA
450
MHz
Output Capacitance
COB
VCB = 15 V, IE = 0
2.8
pF
Collector-Collector
Capacitance
CCC
VCC = 0
8.5
pF
ELECTRICAL CHARACTERISTICS
MAT01AH
MAT01GH
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Min
Unit
Offset Voltage
VOS
0.06
0.15
0.14
0.70
mV
Average Offset
Voltage Drift
TCVOS
(Note 6)
0.15
0.50
0.35
1.8
V/°C
Offset Current
IOS
0.9
8.0
1.5
15.0
nA
Average Offset
Current Drift
TCIOS
(Note 7)
10
90
15
150
pA/
°C
Bias Current
ΙΒ
28
60
36
130
nA
Current Gain
hFE
167
400
77
300
Collector-Base
ICBO
TA = 125
°C, VCB = 30 V,
Leakage Current
IE = 0
4
15
80
25
200
nA
Collector-Emitter
ICES
TA = 125
°C, VCE = 30 V,
Leakage Current
VBE = 0
4, 6
50
300
90
400
nA
Collector-Collector
ICC
TA = 125
°C, V
CC = 30 V,
Leakage Current
(Note 6)
30
200
50
400
nA
(@ VCB = 15 V, IC = 10 A, –55 C
≤ TA ≤ +125 C, unless otherwise noted.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAT01GH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT01GHZ | 功能描述:TRANS MATCHED MONO DUAL TO-78-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT01N | 制造商:AD 制造商全稱:Analog Devices 功能描述:Matched Monolithic Dual Transistor |
| MAT02 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Low Noise, Matched Dual Monolithic Transistor |
| MAT020903H | 制造商:Analog Devices 功能描述:MATCHED MONOLITHE TRANSISTOR - Rail/Tube |
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