參數(shù)資料
型號(hào)： MAPLST2122-030CF
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 3/5頁
文件大?。?/td> 161K
代理商： MAPLST2122-030CF
RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V
MAPLST2122-030CF
4/6/2005
Preliminary
Figure 1. 2110—2170 MHz Test Fixture Schematic
Figure 2. 2110—2170 MHz Test Fixture Component Layout
3
C1,C6
Tantalum Electrolytic Surface Mt. Cap., 22 F
C2,C7
Ceramic Chip Capacitor, 0.1 F
C3,C8
Ceramic Chip Capacitor, 1000 pF
C4,C5,C9,C10
Chip Capacitor, 8.2 pF ATC100B
C11
Chip Capacitor, 0.5 pF ATC100B
C12
Chip Capacitor, 1.2 pF ATC100B
Z1-Z9
Distributed Microstrip Element
J1,J2
SMA Connector, Omni Spectra 2052-5636-02
L1
Inductor, 8 nH, CoilCraft A03T
L2
Inductor, 18.5 nH, CoilCraft A05T
P1,P2
Connector, AMP 640457-4
Q1
Transistor, MAPLST2122-030CF
R1
Chip Resistor (0805), 100k Ohm
R2
Chip Resistor (0805), 10K Ohm
PC Board (74350132-01), Arlon Woven Glass
Teflon .030” Thick, Er=2.54, 2 Oz Copper
Both Sides
相關(guān)PDF資料
PDF描述
MAPLST2122-090CF S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MAPR-000912-500S00 L BAND, Si, NPN, RF POWER TRANSISTOR
MAPR-001011-850S00 L BAND, Si, NPN, RF POWER TRANSISTOR
MAPR-001090-350S00 L BAND, Si, NPN, RF POWER TRANSISTOR
MAPR-002729-170M00 S BAND, Si, NPN, RF POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAPLST2122-060CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
MAPLST2122-090CF 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
MAPM-020512-010C00 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MAPM-020512-010C00_2 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:MAPM-020512-010C00
MAPM-020512-040C00 功能描述:射頻MOSFET電源晶體管 20-512MHz Gain:40dB VSWR:3:5 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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