參數(shù)資料
型號: MAPLST0810-045CF
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: P-239, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 136K
代理商: MAPLST0810-045CF
RF Power LDMOS Transistor, 865-960 MHz, 45W, 26V
MAPLST0810-045CF
5/21/04
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 Adc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
3
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 A)
VGS(th)
2
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 350 mA)
VDS(Q)
4.0
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
VDS(on)
0.20
Vdc
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
Gm
3.0
S
DYNAMIC CHARACTERISTICS @ 25C
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
82
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
46
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
2.5
pF
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W)
GP
17.5
dB
Drain Efficiency
(VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W)
EFF ()
50
%
Input Return Loss
(VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W)
IRL
12
dB
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 350 mA, f = 900 MHz, POUT = 45 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
2
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