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參數(shù)資料
| 型號： | MAPL-000817-015CPC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 168K |
| 代理商： | MAPL-000817-015CPC |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
LDMOS RF Line Power FET Transistor
15 W , 800-1700 MHz, 26V
M/A-COM Products
Released - Rev. 07.08
MAPL-000817-015CPC
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
(1) Device specifications obtained on a Production Test Fixture.
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 Adc)
V(BR)DSS
65
—
Vdc
Gate Quiescent Voltage
(Vds = 26 Vdc, Id = 100 mA)
VDS(Q)
3
—
5
Vdc
Drain-Source On-Voltage
(Vgs = 10 Vdc, Id = 1 A)
VDS(on)
—
0.25
—
Vdc
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) (1)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W)
GP
—
17
—
dB
Drain Efficiency
(VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W)
EFF (
)
—
50
—
%
Input Return Loss
(VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W)
IRL
—
-10
—
dB
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W)
GP
13.0
15
—
dB
Drain Efficiency
(VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W)
EFF (
)
45
50
—
%
Input Return Loss
(VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W)
IRL
—
-10
-8
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPL-000817-015CPC-072706 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V |
| MAPL-000822-002PP | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V |
| MAPL-000978-0075LF | 制造商:M/A-COM Technology Solutions 功能描述:LDMOS RF LINE TRANSISTOR - Bulk |
| MAPL-000978-0075LN | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty |
| MAPL128VC-33 | 制造商:Texas Instruments 功能描述: |
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