參數(shù)資料
型號: MADP-000910-13050T
元件分類: PIN二極管
英文描述: GALLIUM ARSENIDE, PIN DIODE
封裝: FLIP CHIP-2
文件頁數(shù): 5/6頁
文件大?。?/td> 216K
代理商: MADP-000910-13050T
Specification Subject to Change Without Notice
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
5
AlGaAs Flip-Chip PIN Diodes
MA4AGFCP910
Rev 2.0
Applications
The 20 fF capacitance of the MA4AGFCP910 allows use through mmwave switch and switched phase shifter
applications. This diode is designed for use in pulsed or CW applications, where single digit nS switching speed is
required. For surface mount assembly, the low capacitance of the MA4AGFCP910 makes it ideal for use in microwave
multithrow switch assemblies, where the series capacitance of each “off” port adversely loads the input port and affects
VSWR.
Absolute Maximum Ratings @ 25 C
Parameter
Maximum Ratings
Operating Temperature
-65
°C to +125 °C
Storage Temperature
-65
°C to +150 °C
Junction Temperature
+175
°C
Dissipated RF & DC Power
50 mW
RF C.W. Incident Power
+23 dBm C.W.
Mounting Temperature
+300
°C for 10 seconds
Note: Exceeding these limits may cause permanent damage.
Device Installation Procedures
The following guidelines should be observed to avoid damaging GaAs Flip-Chips.
Cleanliness
These devices should be handled in a clean environment.
Do Not attempt to Clean Die After installation.
Static Sensitivity
Gallium arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used
when handling these devices. These devices are rated Class 0, ( 0-199V ) per HBM MIL-STD-883, method 3015.7
[C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die pass 50V ESD, they must be handled in a static-free environment.
General Handling
These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Die can be
handled with plastic tweezers or picked and placed with a #27 tip vacuum pencil.
Assembly Requirements using Electrically Conductive Ag Epoxy and Solder
These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silk-
screened circuits using Electrically Conductive Ag Epoxy, approximately 1-2 mils in thickness and cured at approximately 90
°C to
150
°C per manufacturer’s schedule. For extended cure times > 30 minutes, temperatures must be below 200 °C.
Sn Rich Solders are not recommended due to the Tungsten Metallization scheme beneath the gold contacts. Indalloy or
80 Au/20 Sn Solders are acceptable. Maximum soldering temperature must be < 300
°C for < 10 sec.
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