參數(shù)資料
型號(hào)： MADP-000910-13050T
元件分類： PIN二極管
英文描述： GALLIUM ARSENIDE, PIN DIODE
封裝： FLIP CHIP-2
文件頁數(shù)： 1/6頁
文件大?。?/td> 216K
代理商： MADP-000910-13050T
Specification Subject to Change Without Notice
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 617-564-3100
1
Features
Lower Series Resistance, 5.2
Ultra Low Capacitance, 18 f F
High Switching Cutoff Frequency, 50 GHz
3 Nanosecond Switching Speed
Driven by Standard TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
Description
M/A-COM's MA4AGFCP910 is an Aluminum
Gallium Arsenide Flip-Chip PIN diode. These
devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device
uniformity and extremely low parasitics. The
diodes exhibit an extremely low RC Product,
( 0.1 ps) and 3nS switching characteristics.
They are fully passivated with silicon nitride and
have an additional layer of a polymer for scratch
protection. The protective coatings prevent
damage to the junction and the anode airbridge
during handling.
AlGaAs Flip-Chip PIN Diode
100MHz to 50GHz
MA4AGFCP910
Rev 2.0
Top View Shown Is With Diode Junction Up
Cathode
Package Outline
Electrical Specifications at TA = 25 °C
Parameters and Test Conditions
Symbol
Units
1 MHz & DC
Specifications
10 GHz Reference
Data
1,2
Min
Typ.
Max
Min
Typ.
Max.
Total Capacitance at –5 V
Ct
pF
0.018
0.021
0.018
.021
RF Resistance at +10 mA
Rs
5.2
6.0
Forward Voltage at +10 mA
Vf
Volts
1.33
1.4
Reverse Breakdown Voltage at 10 uA
3
Vb
Volts
50
75
Minority Carrier Lifetime
τL
nS
4.0
Notes:
1.
Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz.
2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line at 10 GHz.
3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MADP-001907-13050P 制造商:M/A-COM Technology Solutions 功能描述:PIN DIODE - Bulk
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