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參數(shù)資料
| 型號(hào)： | MAC212A6FP |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS |
| 中文描述： | 400 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | MAC212A6FP |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or
Four Modes (MAC212AFP Series)
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125
°
C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4FP, MAC212A4FP
MAC212-6FP, MAC212A6FP
MAC212-8FP, MAC212A8FP
MAC212-10FP, MAC212A10FP
VDRM
200
400
600
800
Volts
On-State RMS Current (TC = +85
°
C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85
°
C)
preceded and followed by rated current
IT(RMS)
ITSM
12
Amps
100
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Peak Gate Power (TC = +85
°
C, Pulse Width = 10
μ
s)
Average Gate Power (TC = +85
°
C, t = 8.3 ms)
Peak Gate Current (TC = +85
°
C, Pulse Width = 10
μ
s)
RMS Isolation Voltage (TA = 25
°
C, Relative Humidity
Operating Junction Temperature
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
Watts
0.35
Watt
2
Amps
20%)
1500
Volts
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
CS
R
θ
JA
2.1
°
C/W
Thermal Resistance, Case to Sink
2.2 (typ)
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Order this document
by MAC212FP/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
12 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC212A8 | 功能描述:THYRISTOR TRIAC 12A 600V T0220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 三端雙向可控硅開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 三端雙向可控硅開關(guān)類型:邏輯 - 靈敏柵極 電壓 - 斷路:800V 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:6A 電壓 - 柵極觸發(fā)器 (Vgt)（最大）:1.5V 電流 - 非重復(fù)電涌，50、60Hz (Itsm):* 電流 - 柵極觸發(fā)電流 (Igt)（最大）:10mA 電流 - 維持(Ih):25mA 配置:單一 安裝類型:* 封裝/外殼:* 供應(yīng)商設(shè)備封裝:* 包裝:* 其它名稱:568-9616-6 |
| MAC212A8D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| MAC212A8DG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| MAC212A8FP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAC212A8G | 功能描述:雙向可控硅 THY 12A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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