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參數(shù)資料
| 型號： | MAC212A6 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACs 12 AMPERES RMS 200 thru 800 VOLTS |
| 中文描述： | 400 V, 12 A, TRIAC, TO-220AB |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 70K |
| 代理商： | MAC212A6 |
3–83
Motorola Thyristor Device Data
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes
(MAC212A Series)
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125
°
C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4, MAC212A4
MAC212-6, MAC212A6
MAC212-8, MAC212A8
MAC212-10, MAC212A10
VDRM
200
400
600
800
Volts
On-State Current RMS (TC = +85
°
C)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
12
Amp
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85
°
C)
preceded and followed by Rated Current
ITSM
100
Amp
Circuit Fusing Considerations (t = 8.3 ms)
I2t
40
A2s
Peak Gate Power (TC = +85
°
C, Pulse Width = 10
μ
s)
Average Gate Power (TC = +85
°
C, t = 8.3 ms)
Peak Gate Current (TC = +85
°
C, Pulse Width = 10
μ
s)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
Tstg
20
Watts
0.35
Watt
2
Amp
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SEMICONDUCTOR TECHNICAL DATA
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
12 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAC212A8 | TRIACs 12 AMPERES RMS 200 thru 800 VOLTS |
| MAC212-10 | TRIACs 12 AMPERES RMS 200 thru 800 VOLTS |
| MAC212-4 | TRIACs 12 AMPERES RMS 200 thru 800 VOLTS |
| MAC212-6 | TRIACs 12 AMPERES RMS 200 thru 800 VOLTS |
| MAC212-8 | TRIACs 12 AMPERES RMS 200 thru 800 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC212A6FP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAC212A8 | 功能描述:THYRISTOR TRIAC 12A 600V T0220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 三端雙向可控硅開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 三端雙向可控硅開關(guān)類型:邏輯 - 靈敏柵極 電壓 - 斷路:800V 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:6A 電壓 - 柵極觸發(fā)器 (Vgt)（最大）:1.5V 電流 - 非重復(fù)電涌，50、60Hz (Itsm):* 電流 - 柵極觸發(fā)電流 (Igt)（最大）:10mA 電流 - 維持(Ih):25mA 配置:單一 安裝類型:* 封裝/外殼:* 供應(yīng)商設(shè)備封裝:* 包裝:* 其它名稱:568-9616-6 |
| MAC212A8D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| MAC212A8DG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| MAC212A8FP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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