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參數(shù)資料
| 型號： | MAC08MT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIAC 0.8 AMPERE RMS 200 thru 600 Volts |
| 中文描述： | 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | CASE 318E, 4 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 205K |
| 代理商： | MAC08MT1 |
3–43
Motorola Thyristor Device Data
+
C
d
c
μ
P
P
1.0
0.8
0.7
0.5
0.4
0.2
0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 8. Power Dissipation
0.5
0.4
0.3
0.2
0.1
0
0.6
0.7
0.8
dc
90
°
120
°
10
1.0
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
t, TIME (SECONDS)
r
0.01
1.0
0.001
0.0001
1.0
0.01
0.1
10
100
10
R
0.1
10
1.0
TJ, JUNCTION TEMPERATURE (
°
C)
90
80
70
60
100
110
VDRM = 200 V
400 Hz
300 Hz
0.9
0.6
0.3
0.1
1.0
CHARGE
CONTROL
T
75 VRMS,
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
5
μ
F
NON-POLAR
CL
80 mHY
LL
MEASURE I
1N914
51
2
1
RS
56
0.047 CS
ADJUST FOR
dv/dt(c)
1N4007
200 V
G
110
°
VDRM
ITM
60 Hz
tw
30
°
TRIGGER
Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
C
d
c
μ
60
°
80
°
180 Hz
α
= 180
°
60
°
100
°
α
α
α =
CONDUCTION
ANGLE
Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board
Figure 10. Simplified Q1 (dv/dt)c Test Circuit
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature
Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
f
1
2t
w
(di dt)
c
6f I
TM
1000
–
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