參數(shù)資料
型號(hào): MAC12
廠商: Motorola, Inc.
英文描述: TRIACS 12 AMPERES RMS 400 thru 800 VOLTS
中文描述: 雙向可控硅12安培有效值到400 800伏特
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 41K
代理商: MAC12
3–53
Motorola Thyristor Device Data
Silicon Bidirectional Thyristors
Designed for high performance full–wave ac control applications where high
noise immunity and commutating di/dt are required.
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 70
°
C
Uniform Gate Trigger currents in Three Modes
High Immunity to dv/dt — 250 V/
μ
s minimum at 125
°
C
High Commutating di/dt — 6.5 A/ms minimum at
125
°
C
Industry Standard TO–220 AB Package
High Surge Current Capability — 120 Amperes
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
(TJ = –40 to 125
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC12D
MAC12M
MAC12N
VDRM
400
600
800
Volts
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 70
°
C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125
°
C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
41
A2sec
Peak Gate Power (Pulse Width
1.0
μ
s, TC = 80
°
C)
Average Gate Power (t = 8.3 ms, TC = 80
°
C)
Operating Junction Temperature Range
PGM
PG(AV)
TJ
Tstg
16
Watts
0.35
Watts
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
°
C
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ =1 25
°
C
IDRM
0.01
2.0
mA
(1)
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
CASE 221A–06
(TO-220AB)
Style 4
MT1
MT2
G
TRIACS
12 AMPERES RMS
400 thru 800
VOLTS
*Motorola preferred devices
MT2
相關(guān)PDF資料
PDF描述
MAC12HCD Triacs Silicon Bidirectional Thyristors
MAC12HCM Triacs Silicon Bidirectional Thyristors
MAC12HCN Triacs Silicon Bidirectional Thyristors
MAC12SM Sensitive Gate Triacs
MAC12SN Sensitive Gate Triacs
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