參數(shù)資料
型號(hào): MAAP-000067-TR1000
元件分類: 放大器
英文描述: 5700 MHz - 8500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: 5 X 5 MM, ROHS COMPLIANT, PLASTIC, QFN-20
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 317K
代理商: MAAP-000067-TR1000
Amplifier, Power, 2W
5.1—8.5 GHz
M/A-COM Products
Rev D
MAAP-000067-PKG003
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Figure 2. Small Signal Gain and Input & Output VSWR vs. Frequency and Drain Voltage
at IDQ = 640 mA
0
4
8
12
16
20
24
28
32
36
40
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Ga
in
(
d
B
)
1
2
3
4
5
6
VSW
R
6V
8V
10V
Small Signal Gain
Output VSWR
Input VSWR
Figure 1. 1dB Compression Point vs. Frequency and Drain Voltage
at IDQ = 640mA
20
22
24
26
28
30
32
34
36
38
40
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
P1
dB
(d
Bm
)
6V
8V
10V
Figure 4. Saturated Power Added Efficiency vs. Frequency and Drain Voltage
at IDQ = 640mA
0
5
10
15
20
25
30
35
40
45
50
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
PAE
(%
)
6V
8V
10V
Figure 5. Saturated Output Power vs Frequency and Case Temperature
at Vd = 8V and IDQ = 640mA
20
22
24
26
28
30
32
34
36
38
40
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Ou
tp
ut
Pow
e
r(d
Bm
)
-25C
35C
95C
Figure 6. Small Signal Gain & Saturated Output Power, Power Added Efficiency, and Drain
Current vs Case Temperature at 7GHz, VD = 8V and IDQ = 640mA
24
26
28
30
32
34
36
38
40
42
44
-25
-15
-5
5
1525
35455565758595
Case Temperature (C)
S
G
(d
B)
,P
O
U
T
(d
Bm
),
&
PA
E
(%
)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IDS
(
A
)
SSG
POUT
PAE
IDS
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage
at IDQ = 640mA
20
22
24
26
28
30
32
34
36
38
40
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Ou
tp
u
tPo
wer
(
d
Bm
)
6V
8V
10V
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