參數(shù)資料
型號(hào): MAAP-000067-TR1000
元件分類(lèi): 放大器
英文描述: 5700 MHz - 8500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: 5 X 5 MM, ROHS COMPLIANT, PLASTIC, QFN-20
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 317K
代理商: MAAP-000067-TR1000
Amplifier, Power, 2W
5.1—8.5 GHz
M/A-COM Products
Rev D
MAAP-000067-PKG003
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Maximum Ratings
3
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2.7V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2.0 V).
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Supply Voltage
VDD
6.0
8.0
10.0
V
Gate Supply Voltage
VGG
-2.7
-2.0
-1.2
V
Input Power
PIN
12.0
15.0
dBm
Thermal Resistance
ΘJC
15.6
°C/W
Case Temperature
TC
Note 5
°C
Recommended Operating Conditions
4
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
17
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF)
IDQ
1.02
A
Junction Temperature
TJ
170
°C
Storage Temperature
TSTG
-55 to +150
°C
Quiescent DC Power Dissipated (No RF)
PDISS
10.2
W
3. Operation beyond these limits may result in permanent damage to the part. Exceeding any one or combination of these limits may
cause permanent damage to this device.
4. Operation outside of these ranges may reduce product reliability.
5. Case Temperature = 170°C —
Θ
JC* VDD * IDQ
0
2
4
6
8
10
12
0
20
40
60
80
100
120
140
160
180
Maximum Case Temperature (°C)
Pe
ak
Pow
e
rDi
ssi
pati
o
n
,P
d
iss
(W
)
Power Derating Curve, Quiescent (No RF)
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