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參數(shù)資料
| 型號： | MA737 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type |
| 中文描述： | 1.5 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, NMINIP2-J1, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | MA737 |
1
Schottky Barrier Diodes (SBD)
MA2Q737
Silicon epitaxial planar type
For high-frequency rectification
I
Features
Forward current (average) I
F(AV)
: 1.5 A type
Reverse voltage (DC value) V
R
: 30 V
Allowing automatic insertion with the emboss taping
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RRM
30
V
Repetitive peak reverse voltage
Average forward current
*1
30
V
I
F(AV)
1.5
A
Non-repetitive peak forward
surge current
*2
I
FSM
60
A
Junction temperature
T
j
T
stg
40 to
+
125
40 to
+
125
°
C
°
C
Storage temperature
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Note) *1: With a printed-circuit board (copper foil area 2.5 mm
×
2.5 mm
+ 0.8 mm
×
20 mm or more on both cathode and anode sides)
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Marking Symbol: PC
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 30 V
I
F
= 2 A
V
R
= 10 V, f
= 1 MHz
1
mA
Forward voltage (DC)
V
F
C
t
0.5
V
Terminal capacitance
70
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
50
ns
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. * : t
rr
measuring instrument
4.4
±
0.3
0 to 0.05
2
±
0
1
±
0
2
1
2
±
0
0
+
0
0
5.0
+
0.4
0.1
1.2
±
0.4
1.2
±
0.4
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
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PDF描述 |
|---|---|
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| MA2S111 | Silicon epitaxial planar type |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MA737-TX | 制造商:Panasonic Industrial Company 功能描述: |
| MA738 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Schottky Barrier Diodes (SBD) |
| MA739 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA73FAA | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:14 pin DIP, 5.0 Volt, ACMOS/TTL, Clock Oscillator |
| MA73FAA-R | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:14 pin DIP, 5.0 Volt, ACMOS/TTL, Clock Oscillator |
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