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參數(shù)資料
| 型號(hào)： | MA4VAT904-1061T |
| 英文描述： | High IIP3 PIN Diode Variable Attenuator (0.80-1.0 GHz) |
| 中文描述： | 高IIP3 PIN二極管可變衰減器（0.80-1.0千兆赫） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 394K |
| 代理商： | MA4VAT904-1061T |
High IIP3 PIN Diode Variable Attenuator
0.80-1.0 GHz
MA4VAT904-1061T
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
V2
1
Features
1.0 dB Insertion Loss, Typical
12 dB Return Loss, Typical
25 dB Attenuation, Typical
45 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )
SOIC-8 Surface Mount Package
RoHs Compliant
Extra Features
Covers the following Bands:
GSM
AMPS
Usable Bandwidth: 0.60 GHz to 1.20 GHz
1.5 dB Insertion Loss, Typical
1.8:1 VSWR, Typical
18.5 dB Attenuation, Typical
Description and Applications
M/A-COM’s MA4VAT904-1061T is a HMIC PIN Diode
Variable Attenuator which utilizes an integrated 90
degree 3dB hybrid with a pair of Silicon PIN Diodes
to perform the required attenuation function as D.C.
Voltage (Current) is applied.
This device operates from 0 to 1.9 Volts at 1.89 mA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT904-1061T PIN Diode Variable
Attenuator is designed for AGC Circuit Applications
requiring:
Lower Insertion Loss
Lower distortion through attenuation
Larger dynamic range for wide spread spectrum
applications
Absolute Maximum Ratings
@ +25 °C
Notes:
1. All the above values are at +25 °C, unless otherwise noted.
2. Exceeding these limits may cause permanent damage.
SOIC-8 PIN Configuration (Topview)
PIN
Function
Comments
1
DC1
2
GND
3
GND
4
RFin/out
Symetrical as RF Input/Ouput
5
RFout/in
Symetrical as RF Input/Ouput
6
GND
7
GND
8
DC2
Parameter
Maximum Ratings
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
RF C.W. Incident Power
+33 dBm C.W.
Control Current
50 mA per Diode
Reversed Current @ -30 V
50nA
Operating Temperature
-40 °C to +85 °C
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