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參數(shù)資料
| 型號： | MA4T324333 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | MA4T324333 |
Bipolar High f
T Low Voltage
NPN Silicon Transistors
MA4T3243 Series
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
1
Specications Subject to Change Without Notice.
Features
q
Designed for 3-5 Volt Operation
q
Useable to 6 GHz in Oscillators
q
Useable for Low Noise, Low Voltage Driver Ampliers
Through 3 GHz
q
Useful for Class C Ampliers
q
Available as Chips, and in Hermetic and Surface
Mount Packages
q
Can be Screened to JANTX, JANTXV Equivalent Levels
q
Tape and Reel Packaging Available
Description
The MA4T3243 series of high fT low voltage NPN medi-
um power silicon bipolar transistors are designed for
usage in battery operated systems with 3-5 volt collector
bias. They are useful as low phase noise oscillator
transistors through 6 GHz and as moderate power driver
ampliers through 3 GHz.
These transistors are available as a chip for hybrid oscilla-
tors or in ceramic packages for military or commercial
usage. Both the chip and hermetic packages can be
screened to JANTXV equivalent levels.
These transistors use M/A-COM’s high temperature gold.
platinum, titanium metalization with silicon dioxide and
silicon nitride passivation. The chip is emitter balasted
with polysilicon resistors to prevent current concentration
at high current operation.
Case Styles
Chip
Micro-X
SOT-23
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| MA4T324333TR3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333RT3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324330 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333TR7 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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