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參數(shù)資料
| 型號(hào)： | MA4T56800 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 100K |
| 代理商： | MA4T56800 |
Medium Power, 12 Volt, High f
T NPN
Silicon Bipolar Transistor
MA4T56800
Preliminary Specications
V2.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
1
This Preliminary Specications Data Sheet Sheet Contains Typical Electrical Specications Which May Change Prior to Final Introduction.
Features
q
High Output Power, 23 dBm P
1dB @ 1 GHz
q
High Gain-Bandwidth Product, 4 GHz f
T
q
High Power Gain, |S
21E|
2 = 12 dB @ 1 GHz
GTU (max.) = 11 dB @ 2 GHz
Description
The MA4T568 is a medium power, high f
T silicon NPN
transistor designed to work at 8 - 12 volts V
CC and with
collector currents up to 150 mA.
It is offered as a chip, MA4T56800, for use in hybrid
applications as an amplier or moderate power oscillator.
It can also be supplied in a common collector ceramic
package.
This chip transistor is designed for use in medium power
ampliers through 3 GHz and oscillators operating from
VHF through 5 GHz. A M/A-COM proprietary refractory
barrier/gold metallization system utilized to provide max-
imum device reliability and ease of chip and wire assem-
bly. This transistor series is also manufactured with
M/A-COM's
silicon
oxide
and
silicon
nitride
passivation to assure reliability and low 1/f noise.
Electrical Specications @ 25°C
MA4T56800
Parameter of Test
Condition
Symbol
Units
Chip
Gain Bandwidth Product
V
CE = 10 V
f
T
GHz
I
C = 60 mA
4.2 typ.
Insertion Power Gain
V
CE = 10 V
|S
21E|
2
dB
I
C = 60 mA
f= 1 GHz
12 typ.
Unilateral Gain
V
CE = 10 V
GTU (max.)
dB
I
C = 60 mA
f = 1 GHz
16 typ.
Power Out @ 1dB Compression
V
CE = 10 V
P
1dB
dBm
I
C = 100 mA
f = 1 GHz
22.5 typ.
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