參數(shù)資料
型號(hào): MA4E2502L-1246
元件分類(lèi): 射頻混頻器
英文描述: SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
封裝: CASE 1246, 2 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 110K
代理商: MA4E2502L-1246
3
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
MA4E2502 Series
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Applications Section
The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a
50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm
connector and the output voltage was measured through a bias tee on a voltmeter.
Matching was not attempted.
MA4E2502L-1246
Frequency (GHz) vs. Output Voltage (V)
0.01
0.1
1
10
8
11
1417
2023
Frequency (GHz)
O
u
tp
u
tV
o
lt
ag
e(
V
)
-20 dBm
-10 dBm
0 dBm
+10 dBm
+20 dBm
MA4E2502L-1246
Input Pow er (dBm ) vs. Output Voltage (V)
0.01
0.1
1
10
-20
-15
-10
-5
0
5
10
Input Pow er (dBm )
O
u
tp
u
tV
o
lt
ag
e
(V
)
8 GHz
18 GHz
23 GHz
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