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參數(shù)資料
| 型號(hào)： | MA4E2160 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE |
| 封裝： | CASE 1262, FLIP CHIP-4 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MA4E2160 |
3
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Incident LO Power
+20 dBm
Incident RF Power
+20 dBm .
Mounting Temperature
+235°C for 10 seconds
Electrostatic Discharge ( ESD ) Classification
2
Class 0
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
Forward Current vs Temperature
0.00
0.01
0.10
1.00
10.00
100.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
F
o
rw
a
rd
C
u
rre
n
t(m
A
)
- 50°C
+125°C
25°C
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| MA4E2200A-1141T | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Surface Mount Zero Bias Schottky Detector Diodes |
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