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參數(shù)資料
| 型號： | MA4E2160 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE |
| 封裝： | CASE 1262, FLIP CHIP-4 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MA4E2160 |
2
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Electrical Specifications @ + 25 °C
Parameters and Test Conditions
Symbol
Units
MA4E1317
MA4E1318
Min.
Typ.
Max.
Min.
Typ.
Max.
Junction Capacitance at 0V at 1 MHz
Cj
pF
.020
3
Total Capacitance at 0V at 1 MHz
1
Ct
pF
.030
.045
.060
.030
3
.045
3
.060
3
Junction Capacitance Difference
DCj
pF
.005
.010
Series Resistance at +10mA
2
Rs
Ohms
4
7
4
7
Forward Voltage at +1mA
Vf1
Volts
.60
.70
.80
.60
.70
.80
Forward Voltage Difference at 1mA
DVf
Volts
.005
.010
Reverse Breakdown Voltage at -10uA
Vbr
Volts
4.5
7
SSB Noise Figure
NF
dB
6.5
4
6.5
4
Parameters and Test Conditions
Symbol
Units
MA4E1319-1 or -2
MA4E2160
Min.
Typ.
Max.
Min.
Typ.
Max.
Junction Capacitance at 0V at 1 MHz
Cj
pF
.020
3
.020
3
Total Capacitance at 0V at 1 MHz
1
Ct
pF
.030
3
.045
3
.060
3
.030
3
.045
3
.060
3
Junction Capacitance Difference
DCj
pF
.005
.010
.005
.010
Series Resistance at +10mA
2
Rs
Ohms
4
7
4
7
Forward Voltage at +1mA
Vf1
Volts
.60
.70
.80
.60
.70
.80
Forward Voltage Difference at 1mA
DVf
Volts
.005
.010
.005
.010
Reverse Breakdown Voltage at -10uA
Vbr
Volts
4.5
7
4.5
7
SSB Noise Figure
NF
dB
6.5
4
6.5
4
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode.
4. Measured at an LO frequency of 9.375 GHz, with an IF frequency of 300 MHz. LO drive level is +6 dBM for a single Schottky junc-
tion. The IF noise figure contribution (1.5 dB) is included.
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