- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄180470 > MA4E1319-2 GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE PDF資料下載
參數(shù)資料
| 型號： | MA4E1319-2 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE |
| 封裝： | CASE 1200, FLIP CHIP-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MA4E1319-2 |
3
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Incident LO Power
+20 dBm
Incident RF Power
+20 dBm .
Mounting Temperature
+235°C for 10 seconds
Electrostatic Discharge ( ESD ) Classification
2
Class 0
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
Forward Current vs Temperature
0.00
0.01
0.10
1.00
10.00
100.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
F
o
rw
a
rd
C
u
rre
n
t(m
A
)
- 50°C
+125°C
25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MA4E2160 | GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE |
| MA4E2508M-1112T | SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| MA4P606-255 | SILICON, PIN DIODE |
| MA4P803 | 100 V, SILICON, PIN DIODE |
| MA4ST079-287T | LF-UHF BAND, 54.1 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA4E1338 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Medium Barrier Schottky Diodes |
| MA4E1338_V7 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Medium Barrier Schottky Diodes |
| MA4E1338A1-1141T | 功能描述:肖特基二極管與整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MA4E1338A1-1146T | 功能描述:肖特基二極管與整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MA4E1338A-1141 | 制造商:M/A-COM Technology Solutions 功能描述:SCHOTTKY 8V 0.03A 2PIN SOD-323 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。