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參數(shù)資料
| 型號： | M93C06-DS3TG |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 3 X 3 MM, LEAD FREE, TSSOP-8 |
| 文件頁數(shù)： | 31/31頁 |
| 文件大?。?/td> | 533K |
| 代理商： | M93C06-DS3TG |
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M93C86, M93C76, M93C66, M93C56, M93C46, M93C06
Erase
The Erase Byte or Word (ERASE) instruction sets
the bits of the addressed memory byte (or word) to
1. Once the address has been correctly decoded,
the falling edge of the Chip Select Input (S) starts
the self-timed Erase cycle. The completion of the
cycle can be detected by monitoring the Ready/
Busy line, as described in the READY/BUSY STA-
TUS section.
Write
For the Write Data to Memory (WRITE) instruction,
8 or 16 data bits follow the op-code and address
bits. These form the byte or word that is to be writ-
ten. As with the other bits, Serial Data Input (D) is
sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled, the Chip
Select Input (S) must be taken Low before the next
rising edge of Serial Clock (C). If Chip Select Input
(S) is brought Low before or after this specific time
frame, the self-timed programming cycle will not
be started, and the addressed location will not be
programmed. The completion of the cycle can be
detected by monitoring the Ready/Busy line, as
described later in this document.
Once the Write cycle has been started, it is inter-
nally self-timed (the external clock signal on Serial
Clock (C) may be stopped or left running after the
start of a Write cycle). The cycle is automatically
preceded by an Erase cycle, so it is unnecessary
to execute an explicit erase instruction before a
Write Data to Memory (WRITE) instruction.
Figure 5. ERASE, ERAL Sequences
AI00879B
S
ERASE
1 1
D
Q
ADDR
OP
CODE
1
BUSY
READY
CHECK
STATUS
S
ERASE
ALL
1
0
D
Q
OP
CODE
1
BUSY
READY
CHECK
STATUS
0
An
A0
Xn X0
ADDR
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| MT2VDDT832UY-75XX | 8M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 |
| MB84VD22183EA-85PBS | SPECIALTY MEMORY CIRCUIT, PBGA71 |
| MB84VD22184EA-90PBS | SPECIALTY MEMORY CIRCUIT, PBGA71 |
| M93C66-WMB3TP | 256 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M93C06DW | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
| M93C06MN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
| M93C06-MN6 | 功能描述:電可擦除可編程只讀存儲器 256 (32x8 or 16x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C06-MN6T | 功能描述:電可擦除可編程只讀存儲器 256 (32x8 or 16x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C06-WBN6 | 功能描述:電可擦除可編程只讀存儲器 256 (32x8 or 16x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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