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參數(shù)資料
| 型號： | M9130 |
| 廠商： | Intersil Corporation |
| 英文描述： | 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 第6A，- 100V的，0.550歐姆，拉德硬，P通道功率MOSFET |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | M9130 |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM9130D, R
VGS = 0, ID = 1mA
-100
-
V
(Note 5, 6)
BVDSS
FRM9130H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM9130D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRM9130H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM9130D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM9130H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM9130D, R
VGS = +20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM9130H
VGS = +20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRM9130D, R
VGS = 0, VDS = -80V
-
25
μ
A
(Note 5, 6)
IDSS
FRM9130H
VGS = 0, VDS = -80V
-
100
μ
A
Drain-Source
On-state Volts
(Note 1, 4, 6)
VDS(on)
FRM9130D, R
VGS = -10V, ID = 6A
-
-3.47
V
(Note 1, 5, 6)
VDS(on)
FRM9130H
VGS = -16V, ID = 6A
-
-5.20
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM9130D, R
VGS = -10V, ID = 4A
-
.550
(Note 1, 5, 6)
RDS(on)
FRM9130H
VGS = -14V, ID = 4A
-
.825
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 12/19/89 on TA17731 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRM9130D, FRM9130R, FRM9130H
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