參數(shù)資料
型號(hào)： M9130
廠商： Intersil Corporation
英文描述： 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs
中文描述： 第6A，- 100V的，0.550歐姆，拉德硬，P通道功率MOSFET
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 57K
代理商： M9130
4-2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-100
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
18
A
Drain-Source On-State Volts
VDS(on)
VGS = -10V, ID = 6A
-
-3.47
V
Drain-source On Resistance
RDS(on)
VGS = -10V, ID = 4A
-
.550
Turn-On Delay Time
td(on)
VDD = -50V, ID = 6A
-
48
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
220
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 25
-
128
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
74
Gate-Charge Threshold
QG(th)
VDD = -50V, ID = 6A
IGS1 = IGS2
0
≤
VGS
≤
20
1
4
nc
Gate-Charge On State
QG(on)
16
66
Gate-Charge Total
QGM
33
134
Plateau Voltage
VGP
-3
-12
V
Gate-Charge Source
QGS
3
12
nc
Gate-Charge Drain
QGD
7
28
Diode Forward Voltage
VSD
ID = 6A, VGD = 0
-0.6
-1.8
V
Reverse Recovery Time
TT
I = 6A; di/dt = 100A/
μ
s
-
300
ns
Junction-To-Case
R
θ
jc
-
1.67
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
60
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRM9130D, FRM9130R, FRM9130H
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