參數(shù)資料
型號： M6MGB166S2BWG
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 23/30頁
文件大小： 253K
代理商： M6MGB166S2BWG
N
M
1
2
M
2
O
Page Program
Setup
Lock Bit Program
Setup
Block Erase
Setup
Setup State
Read/Standby State
OTHER
Erase &
Verify
Read
Status Register
B0H
D0H
B0H
D0H
50H
41H
77H
20H
A7H
Suspend State
Read Array
Read
Status Register
FFH
70H
70H
Read
Status Register
Read
Device Identifier
Read
Lock Status
FFH
70H
90H
70H
90H
FFH
FFH
71H
70H
71H
90H
Read Array
OTHER
OTHER
D0H
D0H
D0H
WDi
i=0-127
Erase All Unlocked
Blocks Setup
Program &
Verify
Read
Status Register
71H
Clear
Status Register
Ready
Read Array
(From The Other Bank)
Change Bank
Address
Change Bank
Address
Read State with BGO
40H
Word Program
Setup
WD
0EH
D0H
Single Data Load
to Page Buffer
Setup
74H
WD
OTHER
Internal State
Page Buffer to Flash
Setup
Clear
Page Buffer
Setup
55H
D0H
Read Array
(From The Other Bank)
Change Bank
Address
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGB331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGB331S8BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGD137W34DWG 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
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