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參數(shù)資料
| 型號： | M6MGB166S2BWG |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁數(shù)： | 11/30頁 |
| 文件大?。?/td> | 253K |
| 代理商： | M6MGB166S2BWG |
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Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
11
Read-Only Mode
AC ELECTRICAL CHARACTERISTICS
(Ta = -40 ~85
°
C, F-Vcc = 2.7V ~3.6V)
Write Mode
(F-WE# control)
AC ELECTRICAL CHARACTERISTICS
(Ta = -40 ~85
°
C, F-Vcc = 2.7V ~3.6V)
Timing measurements are made under AC waveforms for read operations.
Symbol
Parameter
Limits
t
a (AD)
t
a (CE)
t
a (OE)
Address access time
Chip enable access time
Output enable access time
t
AVQV
t
ELQV
t
GLQV
t
CLZ
t
DF(CE)
t
OLZ
t
DF(OE)
t
PHZ
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
F-RP# low to output high-Z
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
t
PLQZ
t
RC
Read cycle time
t
AVAV
t
OH
t
PS
Output hold from F-CE#, F-OE#, addresses
F-RP# recovery to F-CE# low
t
OH
t
PHEL
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
F-Vcc=2.7-3.6V
90ns
90
90
30
0
25
90
0
0
25
150
150
Max
Min
Typ
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at F-Vcc=3.3V, Ta=25
°
C
Symbol
Parameter
Write cycle time
Address set-up time
Data hold time
F-OE# hold from F-WE# high
Latency between Read and Write FFH or 71H
Data set-up time
Address hold time
t
AVAV
t
AVWH
t
WHDX
t
WHGL
-
t
DVWH
t
WHAX
t
WC
t
AS
t
DH
t
OEH
t
RE
t
DS
t
AH
Limits
90ns
Typ
90
50
0
50
0
10
30
Max
Min
Unit
ns
ns
ns
ns
ns
ns
ns
Write pulse width
Write pulse width high
F-OE# hold to F-WE# Low
Chip enable hold time
Chip enable set-up time
F-RP# high recovery to write enable low
Block Lockhold from valid SRD
Duration of auto-program operation
Duration of auto-block erase operation
Write enable high to F-RY/BY# low
Block Lock set-up to write enable high
t
WLWH
t
WHWL
t
GHWL
t
WHEH
t
ELWL
t
PHWL
t
QVPH
t
WHRH1
t
WHRH2
t
WHRL
t
PHHWH
t
WHRL
t
PS
t
WP
t
WPH
t
GHWL
t
CH
t
CS
t
BLS
t
BLH
t
DAP
t
DAE
150
4
40
90
80
600
50
30
0
0
0
90
0
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
F-Vcc=2.7-3.6V
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