參數(shù)資料
型號: M68AW512M
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit (512K x16) 3.0V Asynchronous SRAM
中文描述: 8兆位(為512k × 16)3.0V異步SRAM
文件頁數(shù): 3/19頁
文件大?。?/td> 296K
代理商: M68AW512M
3/19
M68AW512M
SUMMARY DESCRIPTION
The M68AW512M is a 8 Mbit (8,388,608 bit)
CMOS SRAM, organized as 524,288 words by 16
bits. The device features fully static operation re-
quiring no external clocks or timing strobes, with
equal address access and cycle times. It requires
a single 2.7 to 3.6V supply. This device has an au-
tomatic power-down feature, reducing the power
consumption by over 99% when deselected.
The M68AW512M is available in TSOP44 Type II
packages.
Figure 2. Logic Diagram
Table 1. Signal Names
AI05835c
19
A0-A18
W
DQ0-DQ15
VCC
M68AW512M
G
16
E
UB
LB
VSS
A0-A16
Address Inputs
DQ0-DQ15
Data Input/Output
E
Chip Enable
G
Output Enable
W
Write Enable
UB
Upper Byte Enable Input
LB
Lower Byte Enable Input
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
DU
Don’t Use as Internally Connected
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M68AW512ML55ND1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68AW512ML55ND6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68AW512ML70ND1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM
M68AW512ML70ND6 功能描述:靜態(tài)隨機存取存儲器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
M68AW512ML70ND6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM