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參數(shù)資料
| 型號： | M68AW512M |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 8兆位（為512k × 16）3.0V異步SRAM |
| 文件頁數(shù)： | 18/19頁 |
| 文件大?。?/td> | 296K |
| 代理商： | M68AW512M |
M68AW512M
18/19
REVISION HISTORY
Table 12. Document Revision History
Date
Version
Revision Details
January 2002
-01
First Issue
15-Mar-2002
-02
Document status moved to Datasheet
Tables 3, 2, 7, 8 and 9 clarified
17-Jun-2002
-03
I
SB
clarified (Table 6)
I
CCDR
, V
DR
clarified (Table 9)
03-Oct-2002
3.1
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot
(revision version 03 equals 3.0).
New part number added.
09-Oct-2002
3.2
Commercial code modified.
27-Sep-2004
4.0
t
PD
and t
PU
modified in
Table 7., Read and Standby Mode AC Characteristics
.
Document structure updated without modifications of the content.
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| M68AW512ML55ND1T | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512ML55ND6T | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512ML70ND1T | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512ML70ND6T | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512MN55ND1T | 8 Mbit (512K x16) 3.0V Asynchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M68AW512ML55ND1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512ML55ND6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512ML70ND1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
| M68AW512ML70ND6 | 功能描述:靜態(tài)隨機(jī)存取存儲器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| M68AW512ML70ND6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (512K x16) 3.0V Asynchronous SRAM |
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