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參數(shù)資料
| 型號： | M68AW511AL55NC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| 中文描述： | 4兆位（為512k × 8）3.0V異步SRAM |
| 文件頁數(shù)： | 7/18頁 |
| 文件大?。?/td> | 132K |
| 代理商： | M68AW511AL55NC6T |
7/18
M68AW511A
Table 4. Capacitance
Note: 1. Sampled only, not 100% tested.
2. At T
A
= 25°C, f = 1MHz, V
CC
= 3.0V.
Table 5. DC Characteristics
Note: 1. Average AC current, cycling at t
AVAV
minimum.
2. E = V
IL
, V
IN
= V
IH
or V
IL
.
3. E
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
– 0.2V.
4. Output disable.
Symbol
Parameter
(1,2)
Test
Condition
Min
Max
Unit
C
IN
Input Capacitance on all pins (except DQ)
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
CC1 (1,2)
Operating Supply Current
V
CC
= 3.6V, f = 1/t
AVAV
,
I
OUT
= 0mA
30
mA
I
CC2 (3)
Operating Supply Current
V
CC
= 3.6V, f = 1MHz
,
I
OUT
= 0mA
5
mA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
–1
1
μA
I
LO (4)
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
–1
1
μA
I
SB
Standby Supply Current CMOS
V
CC
= 3.6V, E
≥
V
CC
– 0.2V,
f = 0
5
10
μA
V
IH
Input High Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input Low Voltage
–0.3
0.6
V
V
OH
Output High Voltage
I
OH
= –1mA
2.4
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
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| M68AW511AL70MC1T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70MC6T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70NC1T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M68AW511AL70MC1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70MC1U | 功能描述:RAM其它 4M (512Kx8) 70ns RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
| M68AW511AL70MC6T | 功能描述:靜態(tài)隨機存取存儲器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| M68AW511AL70NC1 | 制造商:STMicroelectronics 功能描述: |
| M68AW511AL70NC1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM |
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