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參數(shù)資料
| 型號(hào)： | M68AW511AL55NC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| 中文描述： | 4兆位（為512k × 8）3.0V異步SRAM |
| 文件頁(yè)數(shù)： | 10/18頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | M68AW511AL55NC6T |
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M68AW511A
10/18
Table 7. Read and Standby Mode AC Characteristics
Note: 1. Test conditions assume transition timig reference level = 0.3V
CC
or 0.7V
CC
.
2. At any given temperature and voltage condition, t
EHQZ
is less than t
ELQX
and t
GHQZ
is less than t
GLQX
for any given device.
3. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
4. Tested initially and after any design or process changes that may affect these parameters
Symbol
Parameter
M68AW511A
Unit
55
70
t
AVAV
Read Cycle Time
Min
55
70
ns
t
AVQV
Address Valid to Output Valid
Max
55
70
ns
t
AXQX
(1)
Data hold from Address change
Min
5
5
ns
t
EHQZ
(2,3)
Chip Enable High to Output Hi-Z
Max
20
25
ns
t
ELQV
Chip Enable Low to Output Valid
Max
55
70
ns
t
ELQX
(1)
Chip Enable Low to Output Transition
Min
5
5
ns
t
GHQZ
(2,3)
Output Enable High to Output Hi-Z
Max
20
25
ns
t
GLQV
Output Enable Low to Output Valid
Max
25
35
ns
t
GLQX
(1)
Output Enable Low to Output Transition
Min
5
5
ns
t
PD
(4)
Chip Enable High to Power Down
Max
0
0
ns
t
PU
(4)
Chip Enable Low to Power Up
Min
55
70
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M68AW511AL70MC1T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70MC6T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70NC1T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70NC6T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AM55MC1T | 4 Mbit (512K x8) 3.0V Asynchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M68AW511AL70MC1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM |
| M68AW511AL70MC1U | 功能描述:RAM其它 4M (512Kx8) 70ns RoHS:否 制造商:Freescale Semiconductor 封裝:Tray |
| M68AW511AL70MC6T | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 WIRELESS FLASH RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| M68AW511AL70NC1 | 制造商:STMicroelectronics 功能描述: |
| M68AW511AL70NC1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8) 3.0V Asynchronous SRAM |
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