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參數(shù)資料
| 型號： | M68AR512DN70ZB1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 512K x16 1.8V Asynchronous SRAM |
| 中文描述： | 8兆位為512k x16 1.8異步SRAM |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 140K |
| 代理商： | M68AR512DN70ZB1T |
M68AR512D
6/19
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 3. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
Parameter
M68AR512D
V
CC
Supply Voltage
1.65 to 1.95V
Ambient Operating Temperature
Range 1
0 to 70°C
Range 6
–40 to 85°C
Load Capacitance (C
L
)
30pF
Output Circuit Protection Resistance (R
1
)
15.3k
Load Resistance (R
2
)
11.3k
Input Rise and Fall Times
1ns/V
Input Pulse Voltages
0 to V
CC
Input and Output Timing Ref. Voltages
V
CC
/2
Output Transition Timing Ref. Voltages
V
RL
= 0.3V
CC
; V
RH
= 0.7V
CC
AI04831
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
Output Timing Reference Voltage
0V
0.7VCC
0.3VCC
AI03853
VCC
OUT
CL includes probe and 1TTL capacitance
DEVICE
UNDER
TEST
CL
R1
R2
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|---|---|
| M68AR512DN70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512K x16 1.8V Asynchronous SRAM |
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