參數(shù)資料
型號(hào)： M66853FP
廠商： Mitsubishi Electric Corporation
元件分類： FIFO
英文描述： SRAM TYPE FIFO MEMORY
中文描述： FIFO存儲(chǔ)器SRAM的類型
文件頁(yè)數(shù)： 4/15頁(yè)
文件大?。?/td> 118K
代理商： M66853FP
SRAM TYPE FIFO MEMORY
M66850J/FP, M66851J/FP
M66852J/FP, M66853J/FP
MITSUBISHI <DIGITAL ASSP>
"H"input voltage
"L"input voltage
"H"output voltage
I
OZH
I
OZL
I
CC1
I
CC2
0
C
O
Off state output capacitance
V
V
V
V
μ
A
μ
A
μ
A
μ
A
mA
μ
A
I
IL
"L"output voltage
"H"input current
"L"input current
Off state "H"output current
Off state "L"output current
Operating power supply current
Power supply current (Static)
Supply voltage
Input voltage
Output voltage
Maximum power dissipation
Storage temperature
Vcc
V
I
V
O
Pd
Tstg
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Unit
Parameter
Conditions
A value based on GND pin
-0.5 – +7.0
-0.3 – V
CC
+0.5
-0.3 – V
CC
+0.5
Note
-65 – 150
C
mW
V
V
V
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
(Ta=0 – 70C, Vcc=5V
±
10%, GND=0V)
V
V
C
Limits
Typ.
5
Min.
4.5
Max.
5.5
Symbol
Unit
Parameter
Vcc
GND
Topr
Supply voltage
Supply voltage
Operating ambient temperature
Limits
Typ.
Min.
2.0
Max.
Symbol
Test conditions
Unit
Parameter
V
IH
V
IL
V
OH
V
OL
I
IH
0.8
2.4
0.4
1.0
-1.0
5.0
-5.0
70
500
10
15
pF
pF
C
I
Input capacitance
I
OH
=-1mA
I
OL
=8mA
V
I
=V
CC
, Any input
V
I
=GND, Any input
V
O
=V
CC
V
O
=GND
V
I
=V
CC
or GND, f = 40MHz, Outputs are open
V
I
=V
CC
or GND, Outputs are open
f = 1MHz
f = 1MHz
0
70
Ta=70C
4
Note : 450mW(32P6B), 550mW(32P0)
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M66853J 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SRAM TYPE FIFO MEMORY
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