參數(shù)資料
型號(hào): M63850P
元件分類: JFETs
英文描述: 1.5 A, 3 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/5頁
文件大小: 49K
代理商: M63850P
Apr. 2005
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63850P/FP
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
param
etric lim
its are
subject
to change.
Duty Cycle - Drain Current Characteristics
(M63850P)
1.0
0.5
1.5
2.0
0
1.0
0.5
1.5
2.0
0
Duty Cycle - Drain Current Characteristics
(M63850FP)
0
20406080
100
Duty Cycle - Drain Current Characteristics
(M63850P)
1.0
0.5
1.5
2.0
0
1.0
0.5
1.5
2.0
0
Duty Cycle - Drain Current Characteristics
(M63850FP)
Ambient temperature Ta (
°C)
M63850FP
0.744
0.520
M63850P
0
0.5
1.0
1.5
2.0
85
Input Characteristics
Input voltage VDD - VI (V)
Input
current
I
I(
A)
–80
–40
–120
–160
0
VDD = 5V
Ta = 85
°C
Ta = 25
°C
Ta = –40
°C
Thermal Derating Factor Characteristics
012345
0
20406080
100
0
20406080
100
0
20406080
100
0
255075
100
Duty cycle (%)
The drain current values represent the
current per circuit.
Repeated frequency
≥ 10Hz
The value in the circle represents the value of the
simultaneously-operated circuit.
Ta = 25
°C, VDD = 5V
The drain current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value in the circle represents
the value of the simultaneously-
operated circuit.
Ta = 85
°C, VDD = 5V
Duty cycle (%)
The drain current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value in the circle represents
the value of the simultaneously-
operated circuit.
Ta = 25
°C, VDD = 5V
Duty cycle (%)
The drain current values
represent the current per circuit.
Repeated frequency
≥ 10Hz
The value in the circle represents
the value of the simultaneously-
operated circuit.
Ta = 85
°C, VDD = 5V
Power
dissipation
P
d
(W)
Drain
current
I
DS
(A)
Drain
current
I
DS
(A)
Drain
current
I
DS
(A)
Drain
current
I
DS
(A)
1
2
3
4
1
2
3
4
1
2
3
4
1
2
3
4
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