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參數(shù)資料
| 型號(hào)： | M5M51016RT-70LL-I |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| 中文描述： | 1048576位（65536字由16位）的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大小： | 79K |
| 代理商： | M5M51016RT-70LL-I |
MITSUBISHI LSIs
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M51016BTP,RT-70L,-10L-I,
-70LL,-10LL-I
(Ta = - 40 ~ 85 , unless otherwise noted)
C
Symbol
Parameter
V
V
Max
Typ
Limits
Min
2.0
2.2
Test conditions
Unit
μA
0.2V
t
rec (PD)
4.5V
V
(3) POWER DOWN CHARACTERISTICS
BC control mode
CS control mode
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
100
0.8
0.2
-LL
-L
(Note 7)
0.3
20
Power down set up time
Power down recovery time
(2) TIMING REQUIREMENTS
(Ta = - 40 ~ 85 , unless otherwise noted )
V
CC (PD)
V
I (BC)
V
I (CS)
I
CC (PD)
Power down supply voltage
Byte control input BC
1
& BC
2
Chip select input CS
Power down supply current
4.5V <
CC(PD)
V
CC(PD)
<
V
CC
= 3V
1) CS 0.2V
other inputs = 0
~
3V
t
su (PD)
t
rec (PD)
Symbol
Parameter
ns
ms
Max
Typ
Limits
Min
0
5
Test conditions
Unit
4.5V
t
su (PD)
0.2V
2.2V
t
su (PD)
4.5V
4.5V
2.2V
t
rec (PD)
V
CC
BC
1
& BC
2
V
CC
CS
7
CS V
CC
0.2V,other inputs=0
~
3V
2) BC
1
& BC
2
Vcc 0.2V,
Note7. I
CC (PD)
= 1
μ
A in case of Ta = 25 C
C
BC
1
& BC
2
>
CC
0.2V
CS <
V
CC(PD)
2.2V <
CC(PD)
2.0V <
CC(PD)
<
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| M5M51016BTP-70L | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016BTP-70L-I | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
| M5M51016BTP-70LL-I | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM |
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