參數(shù)資料
型號: M5M417400CJ-7
廠商: Mitsubishi Electric Corporation
英文描述: FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
中文描述: 快速頁面模式16777216位(4194304 - Word的4位)動態(tài)隨機存儲器
文件頁數(shù): 6/22頁
文件大小: 657K
代理商: M5M417400CJ-7
MITSUBISHI LSIs
M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
6
Write Cycle (Early Write and Delayed Write)
Read-Write and Read-Modify-Write Cycles
Note 21:
Note 22:
t
RWC
is specified as t
RWC(min)
= t
RAC(max)
+ t
ODD(min)
+ t
RWL(min)
+ t
RP(min)
+ 5t
T
.
t
WCS
, t
CWD
, t
RWD
and t
AWD
and, t
CPWD
are specified as reference points only. If t
WCS
t
WCS(min)
the cycle is an early write cycle and the DQ pins will remain high impedance
throughout the entire cycle. If t
CWD
t
CWD(min)
, t
RWD
t
RWD(min)
, t
AWD
t
AWD(min)
and t
CPWD
t
CPWD(min)
(for fast page mode cycle only), the cycle is a read-modify-write
cycle and the DQ will contain the data read from the selected address. If neither of the above condition (delayed write) of the DQ (at access time and until CAS or OE goes
back to V
IH
) is indeterminate.
Symbol
Parameter
Limits
Unit
M5M417400C-5,-5S
M5M417400C-6,-6S
M5M417400C-7,-7S
Min
Max
Min
Max
Min
Max
t
WC
Write cycle time
90
110
130
ns
t
RAS
RAS low pulse width
50
10000
60
10000
70
10000
ns
t
CAS
CAS low pulse width
13
10000
15
10000
20
10000
ns
t
CSH
CAS hold time after RAS low
50
60
70
ns
t
RSH
RAS hold time after CAS low
13
15
20
ns
t
WCS
Write setup time before CAS low
(Note 22)
0
0
0
ns
t
WCH
Write hold time after CAS low
8
10
10
ns
t
CWL
CAS hold time after W low
13
15
20
ns
t
RWL
RAS hold time after W low
13
15
20
ns
t
WP
Write pulse width
8
10
10
ns
t
DS
Data setup time before CAS low or W low
0
0
0
ns
t
DH
Data hold time after CAS low or W low
8
10
15
ns
t
OEH
OE hold time after W low
13
15
20
ns
Symbol
Parameter
Limits
Unit
M5M417400C-5,-5S
M5M417400C-6,-6S
M5M417400C-7,-7S
Min
Max
Min
Max
Min
Max
t
RWC
Read write/read modify write cycle time
(Note 21)
131
155
180
ns
t
RAS
RAS low pulse width
91
10000
105
10000
120
10000
ns
t
CAS
CAS low pulse width
54
10000
60
10000
70
10000
ns
t
CSH
CAS hold time after RAS low
91
105
120
ns
t
RSH
RAS hold time after CAS low
54
60
70
ns
t
RCS
Read setup time before CAS low
0
0
0
ns
t
CWD
Delay time, CAS low to W low
(Note 22)
36
40
45
ns
t
RWD
Delay time, RAS low to W low
(Note 22)
73
85
95
ns
t
AWD
Delay time, address to W low
(Note 22)
48
55
60
ns
t
CWL
CAS hold time after W low
13
15
20
ns
t
RWL
RAS hold time after W low
13
15
20
ns
t
WP
Write pulse width
8
10
10
ns
t
DS
Data setup time before W low
0
0
0
ns
t
DH
Data hold time after W low
8
10
15
ns
t
OEH
OE hold time after W low
13
15
15
ns
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M5M417400CTP-5S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
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