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參數(shù)資料
| 型號： | M5M417400CJ-7S |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| 中文描述： | 快速頁面模式16777216位（4194304 - Word的4位）動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大小： | 657K |
| 代理商： | M5M417400CJ-7S |
1
MITSUBISHI LSIs
M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 4194304-word by 4-bit dynamic RAMS,
fabricated with the high performance CMOS process, and is ideal
for large-capacity memory systems where high speed, low power
dissipation, and low costs are essential.
The use of double-layer metal process combined with twin-well
CMOS technology and a single-transistor dynamic storage stacked
capacitor cell provide high circuit density at reduced costs.
Multiplexed address inputs permit both a reduction in pins and an
increase in system densities.
FEATURES
XX=J, TP
Standard 26 pin SOJ, 26 pin TSOP
Single 5V
±
10% supply
Low stand-by power dissipation
5.5mW(Max)..................................CMOS Input level
2.2mW (Max)* ...............................CMOS Input level
Low operating power dissipation
M5M417400Cxx-5,-5S .................... 800.0mW (Max)
M5M417400Cxx-6,-6S .................... 660.0mW (Max)
M5M417400Cxx-7,-7S .................... 580.0mW (Max)
Self refresh capability *
self refresh current................................200.0
μ
A(Max)
Fast-page mode, Read-modify-write, RAS-only refresh
CAS before RAS refresh, Hidden refresh capabilities
Early-write mode and OE to control output buffer impedance
All inputs, output TTL compatible and low capacitance
2048 refresh cycles every 32ms (A
0
~ A
10
)
*Applicable to self refresh version (M5M417400CJ,TP-5S,-6S,
-7S :option) only
APPLICATION
Main memory unit for computers, Microcomputer memory, Refresh
memory for CRT
PIN DESCRIPTION
PIN CONFIGURATION (TOP VIEW)
Outline 26P0D-B (300mil SOJ)
Outline 26P3D-E (300mil TSOP)
NC: NO CONNECTION
Type Name
RAS
access
time
(max.ns)
CAS
access
time
(max.ns)
Address
access
time
(max.ns)
OE
access
time
(max.ns)
Cycle
time
(min.ns)
Power
dissipa-
tion
(typ.mW)
M5M417400CXX-5,-5S
50
13
25
13
90
655
M5M417400CXX-6,-6S
60
15
30
15
110
540
M5M417400CXX-7,-7S
70
20
35
20
130
475
Pin name
Function
A
0
~ A
11
Address inputs
DQ
1
~ DQ
4
Data inputs / outputs
RAS
Row address strobe input
CAS
Column address strobe input
W
Write control input
OE
Output enable input
V
CC
Power supply (+5V)
V
SS
Ground (0V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M44260CJ-5 | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CJ | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-5 | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-5S | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
| M5M44260CTP-6 | FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M417400CTP-5 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5S | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-6S | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
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