參數(shù)資料
型號： M5M29GB160BVP-80
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（2097,152 - Word的8位/ 1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁數(shù)： 17/25頁
文件大?。?/td> 229K
代理商： M5M29GB160BVP-80
MITSUBISHI LSIs
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T160BVP-80
Sep 1999. Rev2.0
17
AC WAVEFORMS FOR ERASE OPERATIONS (WE# control
)
20H
D0H
t
WPH
t
WP
t
DS
t
DH
t
CS
t
CH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
RY/BY#
t
AH
V
IH
V
OH
V
OL
V
IH
V
IL
ADDRESSES
t
AS
FFH
SRD
t
OEH
t
DAE
t
WHRL
ADDRESS VALID
ERASE
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
CE#
OE#
WE#
DATA
t
a(OE)
t
a(CE)
BANK ADDRESS VALID
V
IL
V
IH
V
IL
V
IH
t
PS
RP#
WP#
BANK ADDRESS
VALID
BYTE#
V
IL
t
BS
t
BH
t
BLH
t
BLS
AC WAVEFORMS FOR ERASE OPERATIONS (CE# control)
20H
D0H
t
CEPH
t
CEP
t
DS
t
DH
t
WS
t
WH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
RY/BY#
t
AH
V
IH
V
OH
V
OL
V
IL
ADDRESSES
t
AS
FFH
SRD
t
OEH
t
DAE
t
EHRL
ADDRESS VALID
ERASE
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
CE#
OE#
WE#
DATA
t
a(OE)
t
a(CE)
BANK ADDRESS VALID
V
IL
V
IH
V
IL
V
IH
t
PS
RP#
WP#
BANK ADDRESS
VALID
V
IH
BYTE#
V
IL
t
BH
t
BLH
t
BS
t
BLS
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相關代理商/技術參數(shù)
參數(shù)描述
M5M29GB160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB320VP 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB320VP-80 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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