參數(shù)資料
型號: M58LW064BNF
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述: 64兆位x16和x16/x32,塊擦除低壓閃存
文件頁數(shù): 16/53頁
文件大小: 319K
代理商: M58LW064BNF
M58LW064A, M58LW064B
16/53
Table 10. Burst Configuration Register
(1)
Note: 1. The BCR defines both the read mode and the burst configuration.
2. Synchronous burst length is defined as Word or Double-Word, the data bus width depends only on the WORD input.
Asynchronous Page read is two Words or one Double-Word.
3. A burst length of 8 is not available for x32 organisation.
4. At F
K
> 50MHz when X-Latency = 10 or 12, Y-Latency = 2 independent of the value of M9.
At F
K
= 66MHz when X-Lantency = 14 or 16, Y-Latency = 2 indepedent of the value of M9.
5. Latency 7 valid only for continuous burst. Otherwisw Latency = 8.
6. Latency 10 valid only for continuous burst. Otherwisw Latency = 12.
7. Latency 11 valid only for continuous burst. Otherwisw Latency = 12.
8. Latency 14 valid only for continuous burst. Otherwisw Latency = 16.
BCR mode bit
Description
Value
Description
M15
Read Select
0
Synchronous Burst Read
1
Asynchronous Read
M14-M11
X-Latency
(4)
0001
Reserved
0010
7, only for F
K
= 33MHz
(5)
0011
8, only for F
K
= 33MHz
0100
9, only for F
K
= 33MHz
0101
10, only for F
K
= 50MHz
(6)
0110
11, only for F
K
= 50MHz
(7)
1001
12, only for F
K
= 50MHz
1010
13, only for F
K
= 50MHz
1011
14, only for F
K
= 66MHz
(8)
1101
16, only for F
K
= 66MHz
M9
Y-Latency
(4)
0
One Burst Clock cycle
1
Two Burst Clock cycles
M8
Valid Data Ready
0
R valid Low during valid Burst Clock edge
1
R valid Low one data cycle before valid Burst Clock edge
M7
Burst Type
0
Interleaved
1
Sequential
M6
Valid Clock Edge
0
Falling Burst Clock edge
1
Rising Burst Clock edge
M3
Asynchronous
0
Random Read
1
Latch Enable Controlled Read
M2-M0
Burst Length
(2)
100
1 Word or Double-Word
101
2 Words or Double-Words
001
4 Words or Double-Words
010
8 Words or Double-Words
(3)
111
Continuous
相關(guān)PDF資料
PDF描述
M58LW064B150NH1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NH1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064C110ZA6T 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N6T 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064D 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064BNH 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory