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參數(shù)資料
| 型號(hào)： | M58LW064B150ZA1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁(yè)數(shù)： | 24/53頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064B150ZA1T |
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M58LW064A, M58LW064B
24/53
Table 14. Query Structure Overview
Table 15. CFI - Query Address and Data Output in the x16/x32 organization
Note: 1. The x8 or Byte Address mode is not available.
2. In the x16 organization, the value of the address location of the CFI Query is independent of A1 pad (M58LW064B).
3. Query Data are always presented on the lowest order data outputs (DQ7-DQ0) only. Others data (DQ31-DQ8) are set to ’0’.
4. For M58LW064B, A1 = Don’t Care.
Offset
Sub-section Name
Description
00h
Manufacturer Code
01h
Device Code
10h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
System Interface Information
Device timing and voltage information
27h
Device Geometry Definition
Flash device layout
P(h)
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
A(h)
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
(BA+3)h
Block Status Register
Block-related Information
Address
(4)
A22-A1 (M58LW064A)
A22-A2 (M58LW064B)
Data
Instruction
10h
51h
”Q”
51h; ”Q”
52h; ”R”
59h; ”Y”
Query ASCII String
11h
52h
”R”
12h
59h
”Y”
13h
20h
Primary Vendor:
Command Set and Control Interface ID Code
14h
00h
15h
31h
Primary algorithm extended Query Address Table:P(h)
16h
00h
17h
00h
Alternate Vendor:
Command Set and Control Interface ID Code
18h
00h
19h
31h
Alternate Algorithm Extended Query address Table
1Ah
00h
相關(guān)PDF資料 |
PDF描述 |
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| M58LW064 | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NF1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150ZA6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064ANF | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064B150ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BNF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BNH | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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