參數(shù)資料
型號: M58LW064A150NH6T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述: 64兆位x16和x16/x32,塊擦除低壓閃存
文件頁數(shù): 44/53頁
文件大小: 319K
代理商: M58LW064A150NH6T
M58LW064A, M58LW064B
44/53
Figure 23. Erase Suspend & Resume Flowchart and Pseudo Code
Write
70h
Command
AI00615
Read Status
Register
YES
NO
b7 = 1
YES
NO
b6 = 1
Program Continues
Write FFh
Command
PES
instruction:
– write B0h
command
(memory enters read register
state after the PES instruction)
do:
– read status
register
(E or G must be toggled)
while b7 = 1
If b6 = 0, Erase
completed
(at this point the memory
wich
accept only the RD or PER instruction)
RD
instruction:
– write FFh
command
– one o more data
reads
from another block
Write
D0h
Command
Read data
from
another
block
or Program
Start
Write
B0h
Command
Erase Complete
Write FFh
Command
Read Data
PG
instruction:
– write 40h
command
– write Address & Data
PER
instruction:
– write D0h
command
to resume
erasure
– if the program operation completed
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase suspend
was not issued).
相關(guān)PDF資料
PDF描述
M58LW064B150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BNH 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064BNF 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NH1T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
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M58LW064A150T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
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M58LW064A150ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064ANF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories