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參數(shù)資料
| 型號： | M58LW064A150NH6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁數(shù)： | 31/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064A150NH6T |
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M58LW064A, M58LW064B
Figure 11. Asynchronous Page Read for Random or Latch Enable Controlled Read
Asynchrouns Read (M15 = 1), Random (M3 = 0) or Latch Enable Controlled (M3 = 1)
AI03699
L
(2)
A1-A2
(1)
DQ0-DQX
A1 and/or A2 (x16), A2 (x32)
tAVQV1
(1)
A1 and/or A2 only may change in x16 organization, A2 only in x32
organization
(2)
Only for Latch EnableControlled Read
OUTPUT
tLLQV1
tAXQX
Page Read up
to
- 4 Words in x16
organization
- 2 Double-Words in x32 orognization
See Asynchronous
Random
Read
or
Asynchronous
Latch
Enable Controlled Read
OUTPUT + 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064B150NH6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BNH | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064BNF | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NH1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH1T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064A150T1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150T6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064ANF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
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