參數(shù)資料
型號: M58LW032D90ZA1
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
中文描述: 32兆位4Mb的× 8,功能的2Mb x16插槽,統(tǒng)一座3V電源快閃記憶體
文件頁數(shù): 26/51頁
文件大?。?/td> 748K
代理商: M58LW032D90ZA1
M58LW032D
26/51
Table 14. DC Characteristics
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
V
OUT
V
DDQ
±5
μA
I
DD
Supply Current (Random Read)
E = V
IL
, f=5MHz
20
mA
I
DDO
Supply Current (Page Read)
E = V
IL
, f=33MHz
29
mA
I
DD1
Supply Current (Standby)
E = V
IH
, RP = V
IH
40
μ
A
I
DD5
Supply Current (Auto Low-Power)
E = V
IL
, RP = V
IH
40
μ
A
I
DD2
Supply Current (Reset/Power-Down)
RP = V
IL
40
μA
I
DD3
Supply Current (Program or Erase,
Block Protect, Block Unprotect)
Program or Erase operation in
progress
30
mA
I
DD4
Supply Current
(Erase/Program Suspend)
E = V
IH
40
μA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2
V
DDQ
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.2
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.2
V
V
LKO
V
DD
Supply Voltage (Erase and
Program lockout)
2
V
V
PENH
V
PEN
Supply Voltage (block erase,
program and block protect)
2.7
3.6
V
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