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參數(shù)資料
| 型號(hào)： | M58LW032D90N1E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的× 8，功能的2Mb x16插槽，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁數(shù)： | 39/51頁 |
| 文件大?。?/td> | 748K |
| 代理商： | M58LW032D90N1E |
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M58LW032D
Table 29. Extended Query information
Note: 1. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in mV.
2. In x8 mode, A0 must be set to V
IL
, otherwise 00h will be output.
Address
Data (Hex)
Description
offset
x16
x8
(2)
(P)h
0031h
62h
50h
"P"
Query ASCII string - Extended Table
(P+1)h
0032h
64h
52h
"R"
(P+2)h
0033h
66h
49h
"Y"
(P+3)h
0034h
68h
31h
Major version number
(P+4)h
0035h
6Ah
31h
Minor version number
(P+5)h
0036h
6Ch
CEh
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Protect/Unprotect Supported (1=yes)
bit4, Queue Erase Supported (0=no)
bit5, Instant Individual Block locking (0=no)
bit6, Protection bits supported (1=yes)
bit7, Page Read supported (1=yes)
bit8, Synchronous Read supported (0 =no)
bits 9 to 31 reserved for future use
(P+6)h
0037h
6Eh
00h
(P+7)h
0038h
70h
00h
(P+8)h
0039h
72h
00h
(P+9)h
003Ah
74h
01h
Function allowed after Suspend:
Program allowed after Erase Suspend (1=yes)
Bits 7-1 reserved for future use
(P+A)h
003Bh
76h
01h
Block Status Register
bit0, Block Protect Bit status active (1=yes)
bit1, Block Lock-Down Bit status active (not supported)
bits 2 to 15 Reserved for future use
(P+B)h
003Ch
78h
00h
(P+C)h
003Dh
7Ah
33h
V
DD
OPTIMUM Program/Erase voltage conditions
(P+D)h
003Eh
7Ch
00h
V
PP
OPTIMUM Program/Erase voltage conditions
(P+E)h
003Fh
7Eh
01h
OTP protection: No. of Protection Register fields
(P+F)h
0040h
80h
80h
Protection Register’s start address, least significant bits
(P+10)h
0041h
82h
00h
Protection Register’s start address, most significant bits
(P+11)h
0042h
84h
03h
n where 2
n
is number of factory reprogrammed bytes
(P+12)h
0043h
86h
03h
n where 2
n
is number of user programmable bytes
(P+13)h
0044h
88h
03h
Page Read: 2
n
Bytes (n = bits 0-7)
(P+14)h
0045h
8Ah
00h
Synchronous mode configuration fields
(P+15)h
0046h
8Ch
Reserved for future use
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW032D90N1F | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D90N1T | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D90N6 | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D90N6E | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D90N6F | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032D90N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D90N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D90N6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D90N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| M58LW032D90N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
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