參數(shù)資料
型號(hào)： M58LW032C90N6E
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體
文件頁數(shù)： 47/61頁
文件大?。?/td> 845K
代理商： M58LW032C90N6E
47/61
M58LW032C
Table 28. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
Table 29. Device Geometry Definition
Address
A21-A1
Data
Description
1Bh
27h
(1)
V
DD
Min, 2.7V
1Ch
36h
(1)
V
DD
max, 3.6V
1Dh
00h
(2)
V
PP
min – Not Available
1Eh
00h
(2)
V
PP
max – Not Available
1Fh
04h
2
n
μs typical time-out for Word, DWord prog – Not Available
20h
08h
2
n
μs, typical time-out for max buffer write
21h
0Ah
2
n
ms, typical time-out for Erase Block
22h
00h
(3)
2
n
ms, typical time-out for chip erase – Not Available
23h
04h
2
n
x typical for Word Dword time-out max – Not Available
24h
04h
2
n
x typical for buffer write time-out max
25h
04h
2
n
x typical for individual block erase time-out maximum
26h
00h
(3)
2
n
x typical for chip erase max time-out – Not Available
Address
A21-A1
Data
Description
27h
16h
n where 2
n
is number of bytes memory Size
28h
01h
Device Interface
29h
00h
Organization Sync./Async.
2Ah
05h
Maximum number of bytes in Write Buffer, 2
n
2Bh
00h
2Ch
01h
Bit7-0 = number of Erase Block Regions in device
2Dh
1Fh
Number (n-1) of Erase Blocks of identical size; n=64
2Eh
00h
2Fh
00h
Erase Block Region Information
x 256 bytes per Erase block (128K bytes)
30h
02h
相關(guān)PDF資料
PDF描述
M58LW032C90N6 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C90N1T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C90N1F 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C90N1E 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C90N1 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW032C90N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C90N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C90ZA1 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW032C90ZA1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C90ZA1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
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