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參數(shù)資料
| 型號： | M58LW032C90N6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體 |
| 文件頁數(shù)： | 17/61頁 |
| 文件大?。?/td> | 845K |
| 代理商： | M58LW032C90N6E |
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17/61
M58LW032C
Table 3. Configuration Register
Note: 1. 4 - 2 - 2 - 2 (represents X-Y-Y-Y) is not allowed.
2. X latencies can be calculated as: (t
AVQV
– t
LLKH
+ t
QVKH
) + t
SYSTEM MARGIN
< (X -1) t
K.
(X
is an integer number from 4 to 8 and t
K
is the clock period).
3. Y latencies can be calculated as: t
KHQV
+ t
SYSTEM MARGIN
+ t
QVKH
< Y t
K.
4. t
SYSTEM MARGIN
is the time margin required for the calculation.
Address
Bit
Mnemonic
Bit Name
Reset
Value
Value
Description
16
CR15
Read Select
1
0
Synchronous Burst Read
1
Asynchronous Bus Read (default at power-up)
15
CR14
Reserved
14
to
12
CR13-CR11
X-Latency
(2)
XXX
001
Reserved
010
X-Latency = 4, 4-1-1-1 (use only with Y-Latency = 1)
(1)
011
X-Latency = 5, 5-1-1-1, 5-2-2-2
100
X-Latency = 6, 6-1-1-1, 6-2-2-2
101
X-Latency = 7, 7-1-1-1, 7-2-2-2
110
X-Latency = 8, 8-1-1-1, 8-2-2-2
11
CR10
Internal
Clock Divider
X
0
X and Y-Latencies remains as set in CR13-CR11 and
CR9
1
Divides internal clock, X and Y-Latencies multiplied by 2
10
CR9
Y-Latency
(3)
X
0
Y-Latency = 1
1
Y-Latency = 2
9
CR8
Valid Data
Ready
X
0
R valid Low during valid Clock edge
1
R valid Low one cycle before valid Clock edge
8
CR7
Burst Type
X
0
Interleaved
1
Sequential
7
CR6
Valid Clock
Edge
X
0
Falling Clock edge
1
Rising Clock edge
6 to 4
CR5-CR3
Reserved
3
to
1
CR2-CR0
Burst Length
XXX
001
4 Words
010
8 Words
111
Continuous
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW032C90N6 | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N1F | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N1E | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N1 | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032C90N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA1 | 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW032C90ZA1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
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